Radiative and Nonradiative Recombination Processes in AlGaN Quantum Wells on Epitaxially Laterally Overgrown AlN/Sapphire from 10 to 500 K
R. Ishii1, S. Tanaka1, N. Susilo2, T. Wernicke2, M. Kneissl2,3, M. Funato1, and Y. Kawakami1
Published in:
phys. stat. sol. (b), vol. 261 no. 11, pp. 2400018 (2024).
Abstract:
Radiative and nonradiative recombination processes are investigated in the temperature range from 10 to 500 K for AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire templates. Time-integrated photoluminescence (PL) spectroscopy under selective excitation conditions demonstrates that the decrease in the radiative recombination efficiency with increasing temperature is one of the causes of the thermal droop in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes. Time-resolved PL spectroscopy indicates that not only the decreasing nonradiative recombination lifetime but increasing radiative recombination lifetime with increasing temperature contributes to the thermal droop. The temperature dependence of the radiative recombination lifetime is discussed, revealing that luminescence linewidth is a valuable criterion for designing efficient AlGaN-based DUV emitters.
1 Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
2 Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
3 Ferdinand-Braun-Institut, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany
Keywords:
AlGaN, deep-ultraviolet light-emitting diodes, radiative recombination lifetimes, thermal droops
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