Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions
H. Wenzel, A. Maaßdorf, C. Zink, D. Martin, M. Weyers, A. Knigge
Electron. Lett., vol. 57, no. 11, pp. 445-447, doi:10.1049/ell2.12162 (2021).
A multi-active-region bipolar-cascade edge-emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the same third-order vertical mode. A slope efficiency of 3.6 W/A was measured with a threshold current density of 230 A/cm2. The epitaxial layer stack developed features with very low internal optical losses of 0.7 cm-1. The voltage extrapolated to vanishing current is only 0.3 V larger than 3 times the voltage of 1.4 V originating from the photon energy.
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
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