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Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions

H. Wenzel, A. Maaßdorf, C. Zink, D. Martin, M. Weyers, A. Knigge

Published in:

Electron. Lett., vol. 57, no. 11, pp. 445-447, doi:10.1049/ell2.12162 (2021).


A multi-active-region bipolar-cascade edge-emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the same third-order vertical mode. A slope efficiency of 3.6 W/A was measured with a threshold current density of 230 A/cm2. The epitaxial layer stack developed features with very low internal optical losses of 0.7 cm-1. The voltage extrapolated to vanishing current is only 0.3 V larger than 3 times the voltage of 1.4 V originating from the photon energy.

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany

Copyright © 2021 The Authors. Electronics Letters published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology
This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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