1. Research
  2. Publications
  3. Noise Modeling of GaN/AlN HEMT ...

Publications

Noise Modeling of GaN/AlN HEMT

S. Haque1, F. Schnieder2, O. Hilt2, R. Doerner2, F. Brunner2, M. Rudolph1,2

Published in:

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 185-188 (2022).

Abstract:

AlN outperforming GaN as a buffer layer material makes GaN/AlN HEMTs promising for future high power and low noise applications. However, information on the noise performance and the noise modeling of GaN/AlN HEMTs is hardly available in the literature. This paper demonstrates that GaN/AlN HEMT technology at its early development stage presents similar noise parameters and competitive noise performance compared to an existing conventional GaN HEMT. This work also shows that the common Pucel and Pospieszalski noise models are valid and well applicable to the GaN/AlN HEMT devices without any modification.

1 Ulrich L. Rohde Chair of RF and Microwave Techniques, Brandenburg University of Technology, Cottbus, Germany
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH), Berlin, Germany

Keywords:

HEMTs, noise, semiconductor device modeling, semiconductor device noise.

Copyright © 2021 EuMA. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.

Full version in pdf-format.