S. Haque1, F. Schnieder2, O. Hilt2, R. Doerner2, F. Brunner2, M. Rudolph1,2
Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 185-188 (2022).
AlN outperforming GaN as a buffer layer material makes GaN/AlN HEMTs promising for future high power and low noise applications. However, information on the noise performance and the noise modeling of GaN/AlN HEMTs is hardly available in the literature. This paper demonstrates that GaN/AlN HEMT technology at its early development stage presents similar noise parameters and competitive noise performance compared to an existing conventional GaN HEMT. This work also shows that the common Pucel and Pospieszalski noise models are valid and well applicable to the GaN/AlN HEMT devices without any modification.
1 Ulrich L. Rohde Chair of RF and Microwave Techniques, Brandenburg University of Technology, Cottbus, Germany
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH), Berlin, Germany
HEMTs, noise, semiconductor device modeling, semiconductor device noise.
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