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Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations

N. Roccato1, F. Piva1, C. De Santi1, M. Buffolo1, M. Fregolent1, M. Pilati1, N. Susilo2, D. Hauer Vidal2, A. Muhin2, L. Sulmoni2, T. Wernicke2, M. Kneissl2,3, G. Meneghesso1, E. Zanoni1, and M. Meneghini1,4

Published in:

Appl. Phys. Lett., vol. 122, no. 16, pp. 161105, doi:10.1063/5.0144721 (2023).


The long-term stability of ultraviolet (UV)-C light-emitting diodes (LEDs) is of major importance for many applications. To improve the understanding in this field, we analyzed the degradation of AlGaN-based UVC LEDs and modeled the variation of electrical characteristics by 2D simulations based on the results of deep-level optical spectroscopy (DLOS). The increase in the forward leakage current observed during ageing was ascribed an increase in trap-assisted tunneling. The analysis of the degradation kinetics suggests the role of a defect diffusion process, possibly involving impurities coming from the p-type layers.

1 Department of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131, Italy
2 Technische Universität Berlin, Institute of Solid State Physics, Hardenberstr. 36, Berlin 10623, Germany
3 Ferdidnand-Braun-Institut (FBH), Gustav-Kirchhoff-Str. 4, Berlin 12489, Germany
4 Department of Physics and Astronomy, University of Padova, via Marzolo 8, Padova 35131, Italy


Defect diffusion, Doping, Electronic band structure, Semiconductors, Electrical properties and parameters, Optoelectronic devices, Optical deep-level spectroscopy, Light emitting diodes, Quantum wells

Published under an exclusive license by AIP Publishing. https://doi.org/10.1063/5.0144721
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