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Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling

M. Fregolent1, E. Brusaterra1, C. De Santi1, K. Tetzner2, J. Würfl2, G. Meneghesso1, E. Zanoni1, and M. Meneghini1

Published in:

Appl. Phys. Lett., vol. 120, no. 16, pp. 163502, doi:10.1063/5.0085068 (2022).


In this paper, we extensively characterize and model the threshold voltage instability in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric. Specifically, (i) the results indicate that the threshold voltage instability originates from electron trapping at gate dielectric border traps close to the Al2O3/β-Ga2O3 interface. (ii) Logarithmic kinetics were detected for both stress and recovery by means of a innovative fast-capacitance experimental setup, over more than seven decades of time; (iii) a generalized model, which is capable of accurately reproducing the experimental results, was proposed to explain this trend.

1 Department of Information Engineering, University of Padova, Padova, Italy
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

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