Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm
F. Bugge, R. Bege, G. Blume, D. Feise, B. Sumpf, N. Werner, U. Zeimer, K. Paschke, M. Weyers
Published in:
J. Cryst. Growth, vol. 491, pp. 31-35 (2018).
Abstract:
Highly strained InxGa1-xAs QWs are commonly used for laser diodes in the wavelength range beyond 1100 nm, but they suffer from strain induced formation of defects. The effect of different laser structures and different laser layouts on the aging behavior was investigated. If grown and processed under optimized conditions, laser diodes emitting at 1120 nm, 1156 nm and 1180 nm have lifetimes of several 1000 h up to more than 20,000 h in dependence on structure or indium content.
Laser diodes with three different emission wavelength were mounted in a microoptical bench with a second harmonic generation crystal. From these benches laser emission in the green-yellow spectral range with more than 800 mW output power was obtained.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Copyright © 2018 Elsevier B.V. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from Elsevier B.V.
Full version in pdf-format.