K. Tetzner, O. Hilt, and J. Würfl
J.S. Speck and E. Farzana (eds.), Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Application, AIP Publishing, Melville, New York, ISBN: 978-0-7354-2500-2, pp. 10-1–10-26, doi:10.1063/9780735425033_010 (2023).
This chapter reviews recent advances in the fabrication of lateral ß-Ga2O3 power transistors for high-voltage switching applications. In this regard, certain aspects in the design principles and strategies are being discussed that are needed for realizing high-performing transistor devices. In addition, essential process modules including the formation of efficient Ohmic contacts, gate-recess technology, and the use of ion implantation for tuning the electrical properties of the ß-Ga2O3 power transistors are highlighted. By combining these optimized modules to a complete ß-Ga2O3 transistor processing sequence, transistors featuring higher breakdown strengths as seen in more established technologies such as SiC or GaN are demonstrated. However, further electrical characterization of such devices in terms of the static and dynamic performance reveals significant material- and device-related limitations that still prevent use of the full potential of this ultrawide-bandgap material. These results can provide useful guidance for future optimizations in the field of ß-Ga2O3 device technologies in order to reach further improved performance.
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
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