S. Paul, W. Heinrich, O. Bengtsson
IEEE MTT-S Int. Microw. Symp. Dig., Los Angeles, USA, Aug. 4-6, Virtual Event, ISBN 978-1-7281-6815-9, pp. 849-852 (2020).
This paper presents a 50 W floating-ground RF power amplifier for L-Band applications. The amplifier is intended to be used in a reverse-type envelope tracking system with supply voltages of up to 40 V. It accommodates signals with up to 80 MHz bandwidth for the supply modulation. The core element of the amplifier is a packaged floating-ground RF power GaN-HEMT, providing a wideband floating low-frequency ground and a good RF bypass to system ground in a well-defined environment. A saturated output power of 55 W at 1.3 GHz and power-added efficiencies from 57% to 47% in the 1.3 GHz to 1.6 GHz range make this amplifier an excellent candidate for highly efficient reverse-type envelope tracking systems with a performance comparable to conventional non-floating supply-modulated systems.
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
Power amplifiers, envelope tracking, floating ground, GaN-HEMTs, L-band, supply modulation.
Copyright © 2020 by IEEE. All rights reserved.
Copyright and Reprint Permission: Abstracting is permitted with credit to the source. Libraries are permitted to photocopy beyond the limit of U.S. copyright law for private use of patrons those articles in this volume that carry a code at the bottom of the first page, provided the per-copy fee indicated in the code is paid through Copyright Clearance Center, 222 Rosewood Drive, Danvers, MA 01923. For reprint or republication permission, email to IEEE Copyrights Manager at firstname.lastname@example.org.
Full version in pdf-format.