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Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD–Compact Model Approach

P. Beleniotis1, C. Zervos1, S. Krause2,4, S. Chevtchenko2, D. Ritter3, and M. Rudolph1,2

Published in:

IEEE Trans. Electron Devices, vol. 71, no. 6, pp. 3582-3589 (2024).


This article proposes a novel modeling approach for the analysis of the microwave power per- formance of GaN HEMTs. By combining Technology Computer-Aided Design (TCAD) physical and circuit design standard compact trap models, surface and buffer traps can be directly correlated, for the first time, with power-added efficiency (PAE) and output power (Pout). A new trap model topology is created with an RC subnetwork and nonlinear scaling functions, encouraged by TCAD analysis on trap localization. The effects of surface trapping were quantified using a TCAD-based extraction of the proposed trap model, observing a loss on Pout of 3 dBm and a maximum PAE (PAEMAX) loss of 12% due to surface traps. In addition, the correlation of 2-D electron gas (2DEG) at the drain access region with PAEMAX and the 1-dB compression point of Pout (OP1 dB) is investigated and transformed into a correlation between the density of traps (NT) and PAEMAX and OP1 dB, creating a new direct method to connect TCAD with RF large-signal simulations.

1 Institute of Electrical Engineering and Information Science, Brandenburg University of Technology Cottbus–Senftenberg, 03046 Cottbus, Germany
2 Ferdinand-Braun-Institut (FBH), 12489 Berlin, Germany
3 Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel
4 now with Kongsberg Defence and Aerospace Space Electronics, 3188 Horten, Norway

Index Terms:

GaN HEMT, large-signal model, microwave, Technology Computer-Aided Design (TCAD) modeling, trapping effects.

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