Improved lateral brightness in 940-nm high-power broad-area diode lasers using enhanced self-aligned structure
M. Elattar, O. Brox, P. Della Casa, A. Maaßdorf, D. Martin, H. Wenzel, A. Knigge, and P. Crump
Published in:
Semiconductor and Integrated Optoelectronics Conference (SIOE 2021), Cardiff, UK, Mar. 30 - Apr. 1 (2021).
Abstract:
We present high-power broad-area diode lasers with improved beam quality, reduced threshold current, and increased efficiency, realized by implementing an enhanced self-aligned lateral structure.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
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