M. Elattar, J. Rieprich and P. Crump
European Semiconductor Laser Workshop (ESLW 2021), Paris, France, Online Only, Sep. 17-18 (2021).
Proper regulation of the lateral thermal profile (lens) in broad-area diode-lasers (BALs) is essential for improved beam quality. New finite-element thermal-simulation-based analysis of measured thermal lenses in BALs is therefore presented. We show how the interaction of the thermal barrier resistance RK at the semiconductor-to-metal interface with the vertical thermal conductivity profile of the epitaxial layers regulates the thermal lens. As RK tends to 0, variation in the epitaxy has little impact on thermal lensing. For high (measured) Rk, the variation in epitaxy causes 1.4× variation in the lens curvature and comparable degradation in lateral beam quality of the BAL.
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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