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High-power, micro-integrated diode laser modules at 767 and 780 nm for portable quantum gas experiments

M. Schiemangk1,2, K. Lampmann1,2,3, A. Dinkelaker1,2, A. Kohfeldt2, M. Krutzik1,4, C. Kürbis2, A. Sahm2, S. Spießberger2, A. Wicht1,2, G. Erbert2, G. Tränkle2, and A. Peters1,2

Published in:

Appl. Opt., vol. 54, no. 17, pp. 5332-5338 (2015).


We present micro-integrated diode laser modules operating at wavelengths of 767 and 780 nm for cold quantum gas experiments on potassium and rubidium. The master-oscillator-power-amplifier concept provides both narrow linewidth emission and high optical output power. With a linewidth (10 µs) below 1 MHz and an output power of up to 3W, these modules are specifically suited for quantum optics experiments and feature the robustness required for operation at a drop tower or on-board a sounding rocket. This technology development hence paves the way toward precision quantum optics experiments in space.

1 Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
3 Institut für Physik, Johannes Gutenberg-Universität Mainz, 55128 Mainz, Germany
4 Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, USA

OCIS codes:

(140.0140) Lasers and laser optics; (140.3490) Lasers, distributed-feedback; (140.5960) Semiconductor lasers; (130.3120) Integrated optics devices; (020.1335) Atom optics.

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