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High-mobility 4 µm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression

T.-S. Chou1, P. Seyidov1, S. Bin Anooz1, R. Grüneberg1, J. Rehm1, T.T.V. Tran1, A. Fiedler1, K. Tetzner2, Z. Galazka1, M. Albrecht1, and A. Popp1

Published in:

Jpn. J. Appl. Phys., vol. 62, no. SF, pp. SF1004, doi:10.35848/1347-4065/acb360 (2023).


In this work, we comprehensively investigate the development of unwanted parasitic particles in the MOVPE chamber while growing µm level films. The density of the parasitic particles is found to be pronounced at film thicknesses starting from >1.5 to 2 µm. These particles seem to induce structural defects such as twin lamellae, thereby harming the electrical properties of the grown film. The origin of the parasitic particle is attributed to the parasitic reactions within the chamber triggered by the promoted gas-phase reactions during the growth process, which can be largely reduced by increasing the total gas flow and decreasing the showerhead distance to the susceptor. A film thickness of up to 4 µm has been achieved after minimizing the density of parasitic particles. Thereby, RT Hall measurements reveal carrier mobilities of 160 cm2V−1s−1 at carrier concentrations of 5.7 × 1016 cm−3.

1 Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, D-12489 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

© 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

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