Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric
M. Fregolent1, E. Brusaterra1,2, C. De Santi1, K. Tetzner2, J. Würfl2, G. Meneghesso1,3, E. Zanoni1 and M. Meneghini1,4
Published in:
Appl. Phys. Lett., vol. 123, no. 10, pp. 103504, doi:10.1063/5.0154878 (2023).
Abstract:
We present a detailed model of the static and dynamic gate leakage current in lateral β-Ga2O3 MOSFETs with an Al2O3 gate insulator, covering a wide temperature range. We demonstrate that (i) in the DC regime, current originates from Poole–Frenkel conduction (PFC) in forward bias at high-temperature, while (ii) at low temperature the conduction is dominated by Fowler–Nordheim tunneling. Furthermore, (iii) we modeled the gate current transient during a constant gate stress as effect of electron trapping in deep levels located in the oxide that inhibits the PF conduction mechanism. This hypothesis was supported by a TCAD model that accurately reproduces the experimental results.
1 Department of Information Engineering, University of Padova, Padova, Italy
2 Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
3 IUNET - National Interuniversity Consortium for Nanoelectronics, Italy
4 Department of Physics and Astronomy, University of Padova, Padova, Italy
Topics:
Electrical properties and parameters, Field effect transistors, Dielectric materials, Dielectric properties, Electron traps, Oxides, Potential energy barrier, Fowler-Nordheim tunneling
Published under an exclusive license by AIP Publishing. https://doi.org/10.1063/5.0154878
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