1. Research
  2. Publications


GaN-HEMT Integrated Switch LNA Module for 5G Mobile Communications

M.K. Rao1, A. Wentzel2, C. Andrei1, M. Rudolph1,2

Published in:

14th German Microwave Conference (GeMiC 2022), Ulm, Germany, May 16-18, ISBN 978-3-9820397-2-5, pp. 69-71 (2022).


An integration of a two-stage low noise amplifier along with a single pole double throw switch being part of the transceiver front-end using GaN HEMT technology is presented in this paper. The designed standalone LNA has a high gain of 24.4 dB and a low noise figure of 1.25 dB. The LNA is integrated with a SPDT switch with an insertion loss of 0.7 dB and an isolation of 28 dB. Hybrid integration of the two circuits yields a compact demonstrator. The integrated module achieves promising results with a gain of 20.7 dB and a noise figure of 2.6 dB in the receiving mode.

1 Ulrich L. Rohde Chair of RF and Microwave Techniques, Brandenburg University of Technology, Cottbus, Germany
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Insitut für Höchstfrequenztechnik (FBH), Berlin, Germany



© Copyright 2022 IEEE - All rights reserved and © IMA e.V. Ratingen, Germany. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE and IMA e.V.

Full version in pdf-format.