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GaN-HEMT Integrated Switch LNA Module for 5G Mobile Communications

M.K. Rao1, A. Wentzel2, C. Andrei1, M. Rudolph1,2

Published in:

14th German Microwave Conference (GeMiC 2022), Ulm, Germany, May 16-18, ISBN 978-3-9820397-2-5, pp. 69-71 (2022).


An integration of a two-stage low noise amplifier along with a single pole double throw switch being part of the transceiver front-end using GaN HEMT technology is presented in this paper. The designed standalone LNA has a high gain of 24.4 dB and a low noise figure of 1.25 dB. The LNA is integrated with a SPDT switch with an insertion loss of 0.7 dB and an isolation of 28 dB. Hybrid integration of the two circuits yields a compact demonstrator. The integrated module achieves promising results with a gain of 20.7 dB and a noise figure of 2.6 dB in the receiving mode.

1 Ulrich L. Rohde Chair of RF and Microwave Techniques, Brandenburg University of Technology, Cottbus, Germany
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Insitut für Höchstfrequenztechnik (FBH), Berlin, Germany



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