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Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1

K. Tetzner1, M. Klupsch1, A. Popp2, S.B. Anooz2, T.-S. Chou2, Z. Galazka2, K. Ickert1, M. Matalla1, R.-S. Unger1, E. Bahat Treidel1, M. Wolf1, A. Trampert3, J. Würfl1, and O. Hilt1

Published in:

Jpn. J. Appl. Phys., vol. 62, no. SF, pp. SF1010, doi:10.35848/1347-4065/acbebc (2023).


In this work, we report on the realization of vertical (100) β-Ga2O3 FinFET devices for the use in power electronics applications. The experiments are carried out on structures consisting of highly conducting (100) β-Ga2O3 substrates with a doping concentration ND of 3 × 1018 cm−3, and epitaxially grown layers with ND of  × 1016 cm−3 for the drift and channel region. The fabricated FinFET devices feature enhancement-mode properties with a threshold voltage of +4.2 V and on/off-current ratio of 105. Moreover, breakdown measurements of these devices reveal an average breakdown strength of 2.7 MV cm−1. Additional device simulation indicates the presence of electric field peaks near the gate edge outside the active device as high as 7 and 5 MV cm−1 in the Al2O3 gate oxide and β-Ga2O3 semiconductor, respectively.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Str. 2, D-12489 Berlin, Germany
3 Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany

© 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

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