L. Tadmor1, E. Brusaterra1, E. Bahat Treidel1, F. Brunner1, N. Bickel1, S.S.T. Vandenbroucke2, C. Detavernier2, J. Würfl1 and O. Hilt1
Semicond. Sci. Technol., vol. 38, no. 1, pp. 015006, doi:10.1088/1361-6641/aca42a (2023).
The chemical, physical and electrical properties and the robustness of post metallization annealed Al2O3 atomic layers deposited on n-type GaN are investigated in this work. Planar metal insulator capacitors are used to demonstrate a gate-first with following ohmic contacts formation at elevated temperature up to 600°C process flow. X-ray photoelectron spectroscopy indicates that no new bonds in the Al2O3 layer are formed due to exposure to the elevated annealing temperature. X-ray diffraction measurements show no crystallization of the oxide layer. Atomic force microscopy shows signs of degradation of the sample annealed at 600°C. Electrical measurements indicate that the elevated annealing temperature results in an increase of the oxide depletion and the deep depletion capacitances simultaneously, that results in a reduction of the flat band voltage to zero, which is explained by fixed oxide charges curing. A forward bias step stress capacitance measurement shows that the total number of induced trapped charges are not strongly affected by the elevated annealing temperatures. Interface trap density of states analysis shows the lowest trapping concentration for the capacitor annealed at 500°C. Above this temperature, the interface trap density of states increases. When all results are taken into consideration, we have found that the process thermal budget allows for an overlap between the gate oxide post metallization annealing and the ohmic contact formation at 500°C.
1 Ferdinand Braun Institut (FBH), Gustav Kirchhoff Str. 4, 12489 Berlin, Germany
2 Department of Solid State Sciences, CoCooN group, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium
Al2O3, atomic layer deposition, gallium nitride, post metallization annealing
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