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Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers

B. Arar1 , H. Wenzel1, R. Güther1, O. Brox1, A. Maaßdorf1, A. Wicht1, G. Erbert1, M. Weyers1, G. Tränkle1, H.N.J. Fernando2, A. Peters3

Published in:

Appl. Phys. B, vol. 116, no. 1, pp. 175-181 (2014).


Results of a GaAs/AlGaAs-based phase modulator designed for an operating wavelength of 780 nm are presented for the first time. The modulator is based on a P-p-i-n-N double heterostructure and features a waveguide with a vertical W-shaped index profile optimized for low propagation losses and a ridge waveguide for lateral indexguiding. A phase modulation efficiency of 12°/V mm is reported. The propagation losses are determined to about 1.4 dB/cm.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Leibniz-Institut für Astrophysik Potsdam, 14482 Potsdam, Germany
3 Humboldt-Universität zu Berlin, 12489 Berlin, Germany

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