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Design strategies to optimize 660 nm DBR tapered laser performance

G. Blume, O. Matalla, H. Wenzel, A. Maaßdorf, D. Feise, J. Fricke, P. Ressel, S. Kreutzmann, A. Ginolas, A. Sahm, A. Knigge and K. Paschke

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Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2023), Munich, Germany, Jun. 26-30, ISBN: 979-8-3503-4599-5, cb-11-5 (2023).


While red-emitting diode lasers have been around for several decades, their use is still limited due to insufficient power or coherence. Hence, solid state lasers based on frequency conversion are still preferred for several applications (e.g. MID-IR quantum-OCT [1]). Using diode lasers would enable further micro-integration with all its benefits for decreased size and power consumption, as well as increased ruggedness and out-of-the-lab usage. Improving diode lasers to substitute solid state lasers requires to achieve spectral and spatial single mode operation with Watt level optical output power at a wavelength near 660 nm.

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

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