J.-P. Koester, H. Wenzel, J. Fricke, O. Brox, A. Zeghuzi, A. Müller, L.S. Theurer, B. Sumpf, A. Knigge, and G. Tränkle
IEEE J. Sel. Top. Quantum Electron., vol. 28, no. 1, pp. 1500609 (2022).
We present AlGaAs-based monolithically integrated dual-wavelength lasers and master-oscillator power-amplifiers emitting around 785 nm which combine a near diffraction limited beam qualitywith single longitudinalmode emission, both achieved over a wide range of output powers. This holds for alternating dual wavelength operation which is of interest for applications in spectroscopy as well as for simultaneous dual wavelength operation which can be used to generate THz-radiation. Compared to previous designs the lateral optical confinement is provided by two differently deep etched ridge waveguides. Shallow etching is used in lasing and amplifying sections to ensure single-lateralmode operation,whereas deep etching is employed to form more compact S-bends and to enable the use of multi-mode interference (MMI) couplers instead of Y-couplers.
Ferdinand-Braun-Institut gGmbH, Leibniz Institut für Höchstfrequenztechnik (FBH), 12489 Berlin, Germany
Diode lasers, quantum well lasers, integrated optoelectronics, gallium arsenide, spectroscopy, terahertz radiation.
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