Areal Vertical Transmission Line Model Measurement for Drift Region Characterization in Vertical GaN Based Devices
E. Bahat Treidel, M. Wolf, F. Brunner, O. Hilt and J. Würfl
Published in:
Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2022), Monterey, USA, May 9-12, pp. 243-246 (2022).
Abstract:
In this work we present a process control monitoring (PCM) device for electrical characterization of vertical n--GaN drift region layer conduction properties. An areal vertical transmission line model (AV-TLM) like structure with six difference cell surface areas is used for areal specific resistance direct evaluation. The method is used to characterize n--GaN drift epitaxial layers with different carrier concentration grown on sapphire substrates. Initially, the resulting areal specific resistance are higher than predicted with large variation within the wafers. The fast feedback to the epitaxy results in a sequential growth run with 3 times improved layer conductivity and with a factor of 60 improved wafer level uniformity for a similar carrier concentration level.
Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
Keywords:
Vertical GaN devices, Areal vertical transmission line model, Drift region
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