An Ultra-broadband Low-Noise Distributed Amplifier in InP DHBT Technology
T. Shivan1, M. Hossain1, D. Stoppel1, N. Weimann2, S. Schulz1, R. Doerner1, V. Krozer1, W. Heinrich1
48th European Microwave Conference (EuMC 2018), Madrid, Spain, Sep. 25-27, pp. 1209-1212 (2018).
This paper reports an ultra-wideband low-noise amplifier in a transferred-substrate InP DHBT technology. The wideband characteristics are obtained by using a distributed topology with cascode unit cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and an ft/fmax of ∼ 350/400 GHz respectively. Due to optimum line-impedance matching, low common-base transistor’s capacitance, and low collector-current operation, the circuit also exhibits a low noise figure. The measured circuit shows a bandwidth of 40 ... 185 GHz with a noise figure of 8 dB in the frequency range 75 ... 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single stage amplifiers with cascode configuration.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Berlin, Germany
2 University Duisburg-Essen, Duisburg, Germany
distributed amplifier, transferred-substrate, InP DHBT, travelling wave amplifier, low-noise amplifier.
Copyright © 2018 EuMA. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.
Full version in pdf-format.