P. Beleniotis1, F. Schnieder2, S. Krause2, S. Haque1 and M. Rudolph1,2
Int. J. Microwave Wireless Technolog., vol. 14, no. 2, pp. 134-142, doi:10.1017/S1759078721001483 (2022).
Large-signal modeling of Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) demands a proper description of trapping effects. In this paper, a new, simplified yet accurate drain-lag description is proposed, enhancing the simulation accuracy and the extraction flow of the physics-based compact model ASM-HEMT. The present study investigates the impact of drain lag on specific physical phenomena, focusing on the relation between trap states, surface-potential calculations, and electron transport properties. It is supplemented with a revised extraction procedure, minimizing the required measurements, thereby the undesired consequences of several passes on the same device, using pulsed I-V and pulsed S-parameters only, and approaches for efficient and accurate simulation results. We show that the proposed trap model is a determinative tool for simulating both small and large-signal behavior predicting precisely S-parameters and load-pull performance.
1 Brandenburg University of Technology Cottbus-Senftenberg, 03046 Cottbus, Germany
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
GaN HEMTs modeling; drain lag; ASM-HEMT; physics-based models; microwave HEMTs; compact models
Copyright © The Author(s) 2021. Published by Cambridge University Press. This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (hhttps://creativecommons.org/licenses/by/4.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited.
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