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A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers

A. Tomaz1, S. Gerlich1, M. Rudolph1,2, C. Andrei1

Published in:

14th German Microwave Conference (GeMiC 2022), Ulm, Germany, May 16-18, ISBN 978-3-9820397-2-5, pp. 65-68 (2022).


A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the LNA’s small-signal gain, while it also monitors overdrive pulse power and reflected pulse power. The system setup and operation is shown in detail. As an example, two different GaN LNAs were measured in order to validate the test setup.

1 Brandenburg University of Technology Cottbus-Senftenberg (BTU), Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, 03046 Cottbus, Germany
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Insitut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany


Low Noise Amplifier, GaN, HEMT, Robustness, Recovery time, Nonlinear Measurements.

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