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A Full G-band Power Amplifier with 34% Peak PAE in InP-DHBT Technology

M. Hossain, R. Doerner, W. Heinrich, V. Krozer

Published in:

Proc. 18th European Microwave Integrated Circuits Conference (EuMIC 2023), Berlin, Germany, Sep. 18-19, ISBN: 978-2-87487-073-6, pp. 281-284 (2023).


This paper presents a highly efficient full G-band power amplifier (PA) using 500 nm InP-DHBT technology. It consists of 3 stages using a cascade unit power cell. Measurements show in average 12 dB small signal gain in the range 140-220 GHz. At 219 GHz, a saturated output power (Psat) around 13 dBm is achieved. The dc power consumption is 58 mW and results in a power-added efficiency (PAE) of up to 30% at 219 GHz. The peak PAE of 34% is achieved at 160 GHz. The chip area is only 1.5×0.7 mm2. To the knowledge of the authors, this is the highest efficiency for a full G-band amplifier published so far.

Ferdinand-Braun-Institut (FBH) gGmbH, Germany


InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), power amplifier (PA), transferred-substrate process (TS).

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