M. Hossain1, T. Shivan1, R. Doerner1, S. Seifert1, H. Yacoub1, T.K. Johansen2, W. Heinrich1, V. Krozer1
Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 237-240 (2022).
This paper presents a D-band power amplifier (PA) using 800 nm InP-DHBT technology. It consists of a driver stage with a 2-way combined cascade unit power cell. Measurements show 12 dB small signal gain. The output 1-dB compression point (OP1dB) and the saturated output power (Psat) occur around 12 dBm and 14 dBm, respectively. The maximum dc power consumption is 212 mW and results in a power-added efficiency (PAE) of up to 10% at 145 GHz. The chip area is only 1.5×1.2 mm2. This amplifier demonstrates very similar Psat, OP1dB, and PAE values as compared to 250 nm InP-DHBT technologies.
1 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH), Berlin, Germany
2 Technical University of Denmark (DTU), Denmark
InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), power amplifier (PA), transferred-substrate process (TS).
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