T. Hoffmann, L. Schellhase, W. Heinrich, A. Wentzel
IEEE MTT-S Int. Microw. Symp. Dig., Denver, USA, Jun. 19-24, ISBN 978-1-6654-9613-1, pp. 622-625 (2022).
This paper presents for the first time a GaN-based digital class-E outphasing power amplifier (PA) for 5G applications in the 4 GHz range. The amplifier consists of two digital PA MMICs with a 4:1 size ratio between the final-stage transistor gate-widths. A bond-wire-based load network shapes the typical class-E waveform characteristics and combines the two outputs for outphasing at 4 GHz in order to maximize efficiency, also at power back-off (PBO). Moreover, due to the digital design of the PA MMICs the frequency of operation can be easily changed by adjusting the output network, which is a major advantage compared to reactively matched class-E chips.
At 4 GHz a maximum output power (Pout) of 8.4 W and a power gain of 23 dB has been reached for a final-stage drain supply voltage (Vdd) of 27 V. Peak final-stage drain efficiencies (ηdrain) of 84% and 38% were achieved for a Vdd of 10 V at 0 dB and 11.2 dB PBO, respectively. Due to its flexibility regarding digital input and operation modes (PWM, outphasing, switch off one PA) the proposed PA module is a promising candidate to reduce energy consumption in 5G base stations.
Ferdinand-Braun-Institut (FBH), Germany
digital, PWM, switch-mode, power amplifiers, GaN, class-E, outphasing, MMIC.
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