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A 315 GHz Source with Integrated Antenna in InP-DHBT Technology

M. Hossain*, T.K. Johansen#, R. Doerner*, H. Yacoub*, W. Heinrich*, V. Krozer*

Published in:

Proc. 17th European Microwave Integrated Circuits Conference (EuMIC 2022), Milan, Italy, Sep. 26-27, ISBN: 978-2-87487-070-5, pp. 232-235 (2022).


A 315-GHz source with integrated antenna is presented. It consists of a harmonic oscillator and a patch antenna. The harmonic oscillator is realized based on the push-push topology using a 0.8 µm-emitter transferred-substrate (TS) InP-DHBT technology with an fmax of 320 GHz. The harmonic oscillator together with antenna delivers -10 dBm of output power. DC power consumption is only 21 mW from a 1.6-volt power supply, which corresponds to 0.5 % overall DC-to-RF efficiency. The chip area of the source with integrated antenna circuit is 0.9×0.65 mm2.

* Ferdinand-Braun-Institut (FBH), Germany
# National Space Institute, Technical University of Denmark, Denmark


InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC) oscillators, sub-terahertz (THz), transferred-s ubstrate (TS).

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