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A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology

A. Turhaner1, M. Hossain2, M. Brahem2, T.K. Johansen1

Published in:

Proc. 16th European Microwave Integrated Circuits Conference (EuMIC 2021), London, UK, Apr. 3-4, ISBN: 978-2-87487-064-4, pp. 269-272 (2022).


A 300 GHz frequency doubler in transferred-substrate InP DHBT technology is presented. The frequency doubler has an unbalanced single ended topology and employs reflector networks for high efficiency. The experimental results show a saturated output power of -1.45 dBm at 296 GHz. The power consumption is only 9.9 mW leading to a record conversion efficiency of ∼7% for transistor based sources in this frequency range.

1 Department of Electrical Engineering, Technical University of Denmark, Denmark
2 Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH), Berlin, Germany


InP DHBT, THz circuits, frequency multiplier.

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