O. Hilt, F. Brunner, M. Wolf, E. Bahat Treidel, J. Würfl, A. Thies and A. Mogilatenko

Published in:

Proc. 35th Int. Symp. on Power Semiconductor Devices & ICs (ISPSD), Hong Kong, China, May 28 - Jun. 1, ISBN 979-8-3503-9682-9, pp. 374-377 (2023).

Abstract:

AlN-based semiconductor devices are considered to outperform lateral AlGaN/GaN HFETs for power-electronic switching applications due to the high AlN-material breakdown field strength. We present an AlGaN/GaN/AlN-HFET transistor without any compensation doping in the AlN-buffer layer. Breakdown voltage scaling as function of the gate-drain separation of 140 V/µm and power figure-of-merit of 2.4 GW/cm² were achieved which is superior to most other GaN device technologies. 120 mΩ power transistors demonstrated 10 A switching transients up to 950 V off-state voltage and thus meet basic requirements for kW-range power switching. The origin of still present dispersion effects during high voltage switching could be attributed to a high structural defect density at the AlN-buffer / GaN channel material interface.

Keywords:

AlN, GaN, HEMT, HFET

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