Single Emitter Broad Area Laser

Functional principle

High output power is achieved by electrically pumping large area devices with emitting aperture of 30 ... 1200 µm and resonator length up to 8 mm.

630 nm to 1200 nm

Semiconductor layers by means of MOVPE
Monolithic gratings via surface etch technology or two step-epitaxial techniques
Contact windows by
- projection lithography
- implantation and isolating layers
- deposition of metalization
Thinning
Scribing, breaking and cleaving
Facet coating and passivation with extremely long lifetimes

NIR range:
- up to 30 W cw output power depending on wavelength and geometry [publication]
- up to 60 W output power in quasi-continuous wave mode (1 ms pulse width, publication)
- peak power density of over 110 MWcm^-2 driven by short pulse source [publication]
- conversion efficiency > 65% at 10 W output from devices with 90 µm emission aperture [publication]
- 10 W reliable output power from monolithically grating stabilized devices with 90 µm emission aperture [publication]
- high power laser with vertical far field of < 16° (95% power content, publication)
- 17 W near-diffraction-limited emission from a single semiconductor light source [publication]
- reliable output power >120 W (1 ms 200 Hz) from an aperture of 1.2 mm [publication]
- up to 7 W output power from a 30 µm aperture, with a beam parameter product of < 2 mm mrad [publication]
Red spectral range:
- up to 1 W output power at 635 nm
- high efficiency of 37 % at 635 nm [publication]
- 654 nm devices with 2.7 W reliable output (100 µs 35 Hz, publication)
- 670 nm devices with 1.2 W reliable cw output power [publication]

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