Single-Emitter Broad-Area Laser

Functional principle

High output power is achieved by electrically pumping large area devices with emitting aperture of 30 ... 1200 µm and resonator length up to 8 mm.

630 nm to 1200 nm

Semiconductor layers by means of MOVPE
Monolithic gratings via surface etch technology or two step-epitaxial techniques
Contact windows by
- projection lithography
- implantation and isolating layers
- deposition of metalization
Thinning
Scribing, breaking and cleaving
Facet coating and passivation with extremely long lifetimes

NIR range:
- up to 30 W cw output power depending on wavelength and geometry [publication]
- up to 60 W output power in quasi-continuous wave mode (1 ms pulse width, publication)
- peak power density of over 110 MWcm^-2 driven by short pulse source [publication]
- conversion efficiency > 65% at 10 W output from devices with 90 µm emission aperture [publication]
- 10 W reliable output power from monolithically grating stabilized devices with 90 µm emission aperture [publication]
- high power laser with vertical far field of < 16° (95% power content, publication)
- 17 W near-diffraction-limited emission from a single semiconductor light source [publication]
- reliable output power >120 W (1 ms 200 Hz) from an aperture of 1.2 mm [publication]
- up to 7 W output power from a 30 µm aperture, with a beam parameter product of < 2 mm mrad [publication]
Red spectral range:
- up to 1 W output power at 635 nm
- high efficiency of 37 % at 635 nm [publication]
- 654 nm devices with 2.7 W reliable output (100 µs 35 Hz, publication)
- 670 nm devices with 1.2 W reliable cw output power [publication]

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