Single Emitter Broad Area Laser

Functional principle

High output power is achieved by electrically pumping large area devices with emitting aperture of 30 ... 1200 µm and resonator length up to 8 mm.

Applications

  • Remote sensing
  • Illumination
  • Pumping of solid state, fiber and gas lasers
  • Measurement and control engineering
  • Medical technology
  • Sensors
  • Material processing

Wavelength

630 nm to 1200 nm

Chip technology

  • Semiconductor layers by means of MOVPE
  • Monolithic gratings via surface etch technology or two step-epitaxial techniques
  • Contact windows by
    • projection lithography
    • implantation and isolating layers
    • deposition of metalization
  • Thinning
  • Scribing, breaking and cleaving
  • Facet coating and passivation with extremely long lifetimes

Assembly

  • Hard, gold-tin soldered packaging
  • Open heat sinks (C-Mount)
  • Conduction cooled package (CCP)
  • Expansion matched submounts
  • Integrated double-side heat-sinking
  • Additional FAC lenses (fast axis collimator) and external gratings possible

Typical data

  • NIR range:
    • up to 30 W cw output power depending on wavelength and geometry [publication]
    • up to 60 W output power in quasi-continuous wave mode (1 ms pulse width, publication)
    • peak power density of over 110 MWcm-2 driven by short pulse source [publication]
    • conversion efficiency > 65% at 10 W output from devices with 90 µm emission aperture [publication]
    • 10 W reliable output power from monolithically grating stabilized devices with 90 µm emission aperture [publication]
    • high power laser with vertical far field of < 16° (95% power content, publication)
    • 17 W near-diffraction-limited emission from a single semiconductor light source [publication]
    • reliable output power >120 W (1 ms 200 Hz) from an aperture of 1.2 mm [publication]
    • up to 7 W output power from a 30 µm aperture, with a beam parameter product of < 2 mm mrad [publication]
  • Red spectral range:
    • up to 1 W output power at 635 nm
    • high efficiency of 37 % at 635 nm [publication]
    • 654 nm devices with 2.7 W reliable output (100 µs 35 Hz, publication) 
    • 670 nm devices with 1.2 W reliable cw output power [publication]