Mounting of Microwave Devices

The FBH mounts single GaN-microwave transistors with powers up to 100 W as well as MMICs (up to the mm-wavelength range) which have been processed in-house. The devices are characterized, aged, and delivered to cooperating partners.

  • GaN transistors in housing
    [+]GaN transistors in housing
  • Wire-bonded GaN transistor chip
    [+]Wire-bonded GaN transistor chip
  • Module with 2 class-S power amplifier MMICs
    [+]Module with 2 class-S power amplifier MMICs for the wireless infrastructure
  • GaN power diode in housing
    [+]GaN power diode in housing
  • Module with GaN MMIC for the wireless infrastructure
    [+]Module with GaN MMIC for the wireless infrastructure

Challenges in the assembly of these devices consist in:

  • Thermal management in power components (ensuring of a low thermal resistance)
  • Packaging for high powers and high frequencies simultaneously (handling of high currents, avoiding of parasitic effects)
  • Electrical stability (oscillation free)
  • Wire bonding with high current load of the bonds

Please find further technical details and performance figures on electronic devices from the FBH here.

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