Materials technology is the starting point to realize new concepts for optoelectronic and electronic devices. As a center of competence for metalorganic vapor phase epitaxy (MOVPE), the Materials Technology Department produces ultra-thin semiconductor layer structures. On a single-crystalline substrate atomic layer by atomic layer is deposited, leading to a homogeneous layer structure with exactly defined crystalline properties. These wafers are then processed into devices in the Process Technology Department using, e.g., etching and metallization techniques.
The FBH works on semiconductor layer structures based on the material systems (Al,Ga)As, (Al,Ga,In)P, (Ga,In)(As,P) and (Al,Ga,In)N. For this purpose, seven MOVPE systems with different capacities of 12 x 4" for GaAs epitaxy as well as 6 and 11 x 2" up to 8 x 4" for GaN and AlN epitaxy are used.
For the production of AlN layers with low opticalabsorption and low dislocation densities to be used as templates for (Al,In)GaN epitaxy, FBH develops hydride vapor phase epitaxy (HVPE) techniques.
Development and optimization of semiconductor layer growth is supported by several analytical methods to characterize electrical, optical, and structural properties of the grown layer sequences.
As an epi-wafer foundry, FBH offers its knowledge and epitaxy capacities also to external partners. The institute supports customers to realize epitaxial structures with excellent properties according to their requirements and offers analytical assessment of semiconductor structures and devices.