Best Paper – awarded by Journal of Electronic Materials

"Si Doping of GaN in Hydride Vapor-Phase Epitaxy" (J. Electron. Mater., vol. 42, 820 (2013)), submitted to Electronics Materials Conference 2012 by the FBH scientists Eberhard Richter, Ute Zeimer, Carsten Netzel, Markus Weyers, and Günther Tränkle jointly with Toma Stoica from Forschungszentrum Jülich has been selected as one of two publications for the Best Paper Award. Eberhard Richter received the honor at this year's Electronics Materials Conference (26.-28.06.2013) in South Bend, Indiana (USA). The paper deals with n-doped gallium nitride (GaN) crystal growth by hydride vapor phase epitaxy (HVPE) and closely examines tensile strain caused by silicon (Si) doping of GaN. This work leads to a deeper understanding of this strain, opening up approaches to reducing it and thus avoiding cracks inside the GaN:Si crystals.

FBH news: 26.06.2013