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Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence
/forschung/publikationen/minority-carrier-kinetics-in-heavily-doped-gaasc-studied-by-transient-photoluminescence
Room-temperature photoluminescence decay time measurements in heavily doped GaAs:C-layers designed as base layers for heterojunction bipolar transistors are reported. These measurements provide…
Analytical Description of Metall-Loss in Finite-Difference Transmission-Line Analysis
/forschung/publikationen/analytical-description-of-metall-loss-in-finite-difference-transmission-line-analysis
A new approximate approach to include metallic loss of planar transmission lines in the finite-difference frequency-domain analysis is presented. From the two-dimensional field behaviour in the…
Polarization charges at spontaneously ordered (In,Ga)P/GaAs interfaces
/forschung/publikationen/polarization-charges-at-spontaneously-ordered-ingapgaas-interfaces
The depth-resolved electrical characteristics of n- and p-type GaAs/(In,Ga)P/GaAs heterojunctions are examined by capacitance-voltage measurements. Different epitaxial growth conditions are chosen to…
Electric-field-induced redistribution of free carriers at isotope (In,Ga)P/GaAs interfaces
/forschung/publikationen/electric-field-induced-redistribution-of-free-carriers-at-isotope-ingapgaas-interfaces
Metal-semiconductor contacts are applied to study depth-resolved electrical characteristics of Si- and Zn-doped GaAs/(In,Ga)P/GaAs heterojunctions by capacitance-voltage measurements. The measured…
High-brightness 735 nm tapered diode lasers
/forschung/publikationen/high-brightness-735-nm-tapered-diode-lasers
High brightness 735 nm single emitter tapered diode lasers were manufactured and analysed. A beam propagation factor M2 smaller than 1.4 is achieved up to an output power of 2 W.
Fabrication and Electrical Performance of Oscillators in GaInP/GaAs-HBT MMIC Technology up to 40 GHz
/forschung/publikationen/fabrication-and-electrical-performance-of-oscillators-in-gainpgaas-hbt-mmic-technology-up-to-40-ghz
The fabrication and electrical performance of monolithic coplanar 19- and 38-GHz oscillators in GaInP/GaAs-HBT MMIC technology are presented. Both fixed frequency and Voltage Controlled Oscillators…
Spectroscopy of high-density assemblage of InAs/GaAs quantum dots
/forschung/publikationen/spectroscopy-of-high-density-assemblage-of-inasgaas-quantum-dots
High-density arrays of InAs/GaAs quantum dots (QDs) have been studied by means of steady-state and time resolved photoluminescence (PL) within a wide range of laser power. The ground state tunnelling…
Many-body effects as probe of defects presence in heavily doped AlGaAs/InGaAs/GaAs heterostructures
/forschung/publikationen/many-body-effects-as-probe-of-defects-presence-in-heavily-doped-algaasingaasgaas-heterostructures
Strikingly strong many-body enhancement of the oscillator strength for interband transitions is observed in the photoluminescence (PL) of heavily doped pseudomorphic AlxGa1-xAs/InyGa1-yAs/GaAs…
The influence of many body and electron nonparabolicity effects in the intersubband optical spectra of III-V quantum wells
/forschung/publikationen/the-influence-of-many-body-and-electron-nonparabolicity-effects-in-the-intersubband-optical-spectra-of-iii-v-quantum-wells
In this paper, effective masses adjusted to the non parabolic electron subbands obtained from the solutions of an 8x8 KP Hamiltonian are used as input for a many particle optical susceptibility…