Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Coplanar SiGe VCO MMICs beyond 20 GHz
/forschung/publikationen/coplanar-sige-vco-mmics-beyond-20nbspghz
In this paper, a set of state-of-the-art monolithic oscillators using different commercially available SiGe foundry processes, and a research process, are to be presented. Results comprise a 25 GHz…
Publikationen
/forschung/publikationen/on-the-computation-of-eigen-modes-for-lossy-microwave-transmission-lines-including-perfectly-matched-layer-boundary-conditions
Micromachined 60 GHz GaAs Power Sensor with Integrated Receiving Antenna
/forschung/publikationen/micromachined-60-ghz-gaas-power-sensor-with-integrated-receiving-antenna
A micromachined 60 GHz GaAs power sensor with a monolithically-integrated receiving antenna will be presented. In this sensor configuration thermoelectrical properties of AlGaAs/GaAs heterostructures…
LTCC as MCM Substrate: Design of Strip-Line Structures and Flip-Chip Interconnects
/forschung/publikationen/ltcc-as-mcm-substrate-design-of-strip-line-structures-and-flip-chip-interconnects
LTCC multilayer substrates offer a cost-effective MCM solution for frequencies around 20 GHz and beyond. This paper reports on LTCC-specific transmission-line structures using a commercially…
High-Voltage GaAs Power-HBTs for Base-Station Amplifiers
/forschung/publikationen/high-voltage-gaas-power-hbts-for-base-station-amplifiers
Base stations require high-power devices operating at bias voltage around 26 V. This paper reports on GaAs HBTs with increased breakdown voltage. Transistors on unthinned wafers deliver 3.2 W at 2…
Coplanar and Microstrip Oscillators in SiGe SIMMWIC Technology
/forschung/publikationen/coplanar-and-microstrip-oscillators-in-sige-simmwic-technology
Oscillators in SiGe SIMMWIC HBT technology have been relized in coplanar and a newly developed microstrip environment. Coplanar 24 GHz LC oscillators show 8.7 dBm output power and a phase noise of…
Low Phase-Noise GaInP/GaAs-HBT MMIC Oscillators up to 36 GHz
/forschung/publikationen/low-phase-noise-gainpgaas-hbt-mmic-oscillators-up-to-36-ghz
Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz,…
Influence of oxygen in AlGaAs-based laser structures with Al-free active region on device properties
/forschung/publikationen/influence-of-oxygen-in-algaas-based-laser-structures-with-al-free-active-region-on-device-properties
AlGaAs-based lasers with GaAsP active regions for emission wavelengths near 730nm and 800nm were studied. Trimethyl aluminium sources with different levels of oxygen concentration were used for the…
2 W reliable operation of λ = 735 nm GaAsP/AlGaAs laser diodes
/forschung/publikationen/2w-reliable-operation-of-lambdanbspnbsp735nbspnm-gaaspalgaas-laser-diodes
Reliable operation of 735 nm laser diodes based on a tensile-strained GaAsP quantum well embedded in an AlGaAs large optical cavity structure is reported. The 100 µm stripe width…
High-Power 810-nm GaAsP-AlGaAs Diode Lasers With Narrow Beam Divergence
/forschung/publikationen/high-power-810-nm-gaasp-algaas-diode-lasers-with-narrow-beam-divergence
AlGaAs-based large optical cavity (LOC) laser diodes (LDs) emitting at 808 nm using a tensile-strained GaAsP quantum-well (QW) were developed. LDs with 1-µm-LOC and 2 µm-LOC structure…