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Publikationen

/forschung/publikationen/high-efficiency-algainpalgaas-vertical-cavity-surface-emitting-lasers-with-650nm-wavelength

High electric field performance of Al0.3Ga0.7As/GaAs and Al0.3Ga0.7As/GaAs/In0.3Ga0.7As quantum well micro-Hall devices

/forschung/publikationen/high-electric-field-performance-of-al03ga07asgaas-and-al03ga07asgaasin03ga07as-quantum-well-micro-hall-devices

Quantum well micro-Hall devices based on uniformly Si-doped Al0.3Ga0.7As/GaAs and Si-δ-doped Al0.3Ga0.7As/GaAs/In0.3Ga0.7As heterostructures are investigated as function of electric field and…

XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems

/forschung/publikationen/xtem-and-tfxrd-investigations-of-ohmic-tialtiauwsin-contacts-on-algangan-hfet-layer-systems

The microstructural features of the high-temperature-stable ohmic contact system Ti/Al/Ti/Au/WSiN on AlGaN/GaN were investigated using analytical transmission electron microscopy and thin film x-ray…

The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy

/forschung/publikationen/the-impact-of-defects-to-minority-carrier-dynamics-in-heavily-doped-gaasc-analyzed-by-transient-photoluminescence-spectroscopy

We report photoluminescence decay time measurements in heavily Carbon-doped GaAs epilayers which are designed for the application in heterojunction bipolar transistors. These data provide access to…

The Influence of Many-Body and Bandstructure Effects in the Design of High Power Diode Lasers

/forschung/publikationen/the-influence-of-many-body-and-bandstructure-effects-in-the-design-of-high-power-diode-lasers

A microscopic many-body theory is used to compute the dielectric constant of single quantum wells. The nonparabolic electron and hole subband dispersion relations and dipole transition moments of the…

Unified Model for Collector Charge in Heterojunction Bipolar Transistors

/forschung/publikationen/unified-model-for-collector-charge-in-heterojunction-bipolar-transistors

The base-collector capacitance and the collector transit-time in GaAs-based heterojunction bipolar transistors depend not only on base-collector voltage, but also on collector current. This has to be…

Interaction between the Fermi-edge singularity and optical phonons in AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures

/forschung/publikationen/interaction-between-the-fermi-edge-singularity-and-optical-phonons-in-alxga1-xasinyga1-yasgaas-heterostructures

Many-electron effects in pseudomorphically strained modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs (x=0.20, y=0.19) heterostructures are investigated using photoluminescence as a function of magnetic…

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE

/forschung/publikationen/real-time-calibration-of-wafer-temperature-growth-rate-and-composition-by-optical-in-situ-techniques-during-alxga1-xas-growth-in-movpe

In this paper we report a novel technique, based on optical measurements, to measure the true temperature of the wafer surface during epitaxial growth. It will be shown that this temperature can…

High-Power Highly Strained InGaAs Quantum-Well Lasers Operating at 1.2 µm

/forschung/publikationen/high-power-highly-strained-ingaas-quantum-well-lasers-operating-at-12-mm

In this letter, high-power highly strained InxGa1-xAs quantum-well lasers operating at 1.2 µm are demonstrated. The edge emitting broad area (BA) laser diode structures are grown by metal…

Publikationen

/forschung/publikationen/intersubband-and-interband-optical-absorption-study-of-strain-compensated-ingaas-ingap-superlattices-grown-on-gaas