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MOVPE process development for 650 nm VCSELs using optical in-situ techniques
/forschung/publikationen/movpe-process-development-for-650-nm-vcsels-using-optical-in-situ-techniques
In this paper we report on the optimization and control of key layer properties of visible vertical cavity surface emitting laser (VCSEL) for emission at wavelengths around 650 nm by means of an…
Publikationen
/forschung/publikationen/detailed-modeling-of-metal-organic-vapor-phase-epitaxy-of-iii-v-ternary-compounds-in-production-scale-aix-2400g3-planetary-reactor
Mounting of High Power Laser Diodes on Boron Nitride Heat Sinks Using an Optimized Au/Sn Metallurgy
/forschung/publikationen/mounting-of-high-power-laser-diodes-on-boron-nitride-heat-sinks-using-an-optimized-ausn-metallurgy
High power diode lasers become more and more important to industrial and medical applications. In contrast to low power applications, long cavity lasers or laser bars are used in this field and…
Performance of 3-W/100-µm stripe diode laser at 950 and 810 nm
/forschung/publikationen/performance-of-3-w100-um-stripe-diode-laser-at-950-and-810nbspnm
In this paper we report on Al-free InGaAs/InGaAsP/InGaP broad area laser diodes emitting at 950nm and on 810nm-laser diodes with Al-free GaAsP quantum wells in AlGaAs waveguides. 2mm long diode…
Comparison of Optical VCSEL Models on the Simulation of Oxide-Confined Devices
/forschung/publikationen/comparison-of-optical-vcsel-models-on-the-simulation-of-oxide-confined-devices
We compare the results of different optical vertical-cavity surface-emitting laser models on the position-dependet effects of thin oxide apertures. Both scalar and vectorial models as well as hybrid…
Continuous Wave Vertical-cavity Surface-emitting Lasers with Emission Wavelengths near 650 nm
/forschung/publikationen/continuous-wave-vertical-cavity-surface-emitting-lasers-with-emission-wavelength-near-650-nm
Red VCSELs for emission wavelengths near 650 nm find applications in emerging technologies such as plastic-fiber-based data communication. However, these devices are challenging due to low band…
In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy
/forschung/publikationen/in-situ-determination-of-the-carrier-concentration-of-001-gaas-by-reflectance-anisotropy-spectroscopy
We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (nearly 20 nm) in-situ during layer growth. The doping…
High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers
/forschung/publikationen/high-efficiency-algainp-based-650nbspnm-vertical-cavity-surface-emitting-lasers
Record high continuous-wave output power of 3.1 mW and peak wall-plug efficiency of 14% at the wavelength of 650 nm have been achieved from oxide-confined AlGaInP/AlGaAs vertical-cavity…
Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography
/forschung/publikationen/uniformity-and-scalability-of-algangan-hemts-using-stepper-lithography
AlGaN/GaN HEMTs processed by 2 inch stepper lithography in a production line environment are presented. The uniformity of the HEMTs is assessed, showing an excellent homogeneity of electrical…