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High-Power Highly Reliable Al-Free 940-nm Diode Lasers
/forschung/publikationen/high-power-highly-reliable-al-free-940-nm-diode-lasers
Al-free diode lasers emitting at 940 nm having a broadened step-index waveguide structure and a single active InGaAs quantum well have been realized by MOVPE. The impact of waveguide thickness on…
12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells
/forschung/publikationen/12nbspw-continuous-wave-diode-lasers-at-1120nbspnm-with-ingaas-quantum-wells
Highley strained InGaAs quantum wells were grown by metalorganic vapor-phase epitaxy. By lowering the growth temperature to 530°C, a maximum photoluminescence wavelength of 1192 was achieved.…
Publikationen
/forschung/publikationen/iterative-solution-of-systems-of-linear-equations-in-microwave-circuits-using-a-block-quasi-minimal-residual-algorithm
Publikationen
/forschung/publikationen/numerical-simulation-for-lossy-microwave-transmission-lines-including-pml
Publikationen
/forschung/publikationen/evidence-for-strain-induced-lateral-carrier-confinement-in-ingaas-quantum-wells-by-low-temperature-near-field-spectroscopy
Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing
/forschung/publikationen/degradation-properties-of-movpe-grown-gainpgaas-hbts-under-combined-temperature-and-current-stressing
Reliability tests at different ambient temperatures and biasing conditions have been performed on GaInP/GaAs heterojunction bipolar transistors. The epitaxial layer structure of the transistors has…
Publikationen
/forschung/publikationen/critical-issues-of-growth-optimization-for-ga05in05pgaas-heterojunction-bipolar-transistors
A Peeling Algorithm for Extraction of the HBT Small-Signal Equivalent Circuit
/forschung/publikationen/a-peeling-algorithm-for-extraction-of-the-hbt-small-signal-equivalent-circuit
Direct extraction is the most accurate method for the determination of equivalent-circuits of heterojunction bipolar transistors (HBTs). The method is based on first determining the parasitic…
Publikationen
/forschung/publikationen/large-area-algangan-hemts-grown-on-insulating-silicon-carbide-substrates