MOVPE process development for 650 nm VCSELs using optical in-situ techniques
M. Zorna , K. Haberlandb,c, A. Kniggea, A. Bhattacharya, M. Weyersa, J.-T. Zettlerb,c, W. Richterb
Published in:
J. Cryst. Growth, vol. 235, pp. 25-34 (2002).
Abstract:
In this paper we report on the optimization and control of key layer properties of visible vertical cavity surface emitting laser (VCSEL) for emission at wavelengths around 650 nm by means of an optical real-time sensor allowing for both spectroscopic reflectance and reflectance anisotropy measurements. In contrast to conventional ex-situ characterization the in-situ sensor yields information on properties like thickness, composition and doping for all buried layers, especially the lower distributed Bragg reflector which has a strong influence on the final device performance. Using in-situ sensor-based optimization of the growth process 650 nm VCSEL devices with a record-high continuous-wave output power of 3 mW at room temperature have been fabricated.
aFerdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
bTechnische Universität Berlin, Institut für Festkörperphysik, Sekr. PN 6-1, Hardenbergstr. 36, D-10623 Berlin, Germany
cLayTec GmbH, PN 5-7, Hardenbergstr. 36, D-10623 Berlin, Germany
Keywords:
A3. Laser epitaxy; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III-V materials; B3. In-situ reflectance; B3. Laser diodes; B3. Reflectance anisotropy spectroscopy
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