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Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography

R. Lossy1, J. Hilsenbeck1, J. Würfl1, H. Obloh2

Published in:

phys. stat. sol. (a), vol.188, no. 1, pp. 263-266 (2001).

Abstract:

AlGaN/GaN HEMTs processed by 2 inch stepper lithography in a production line environment are presented. The uniformity of the HEMTs is assessed, showing an excellent homogeneity of electrical properties over the wafer. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 mA/mm, 203 mS/mm, -3.5V with very good homogeneity across 2". The cut off frequencies FT and Fmax are 23 and 57 GHz, respectively. Standard deviations across the wafer for the dc properties are below 3%.

1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
2 Fraunhofer-Institut für Angewandte Festkörperphysik, 79108 Freiburg, Germany

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