In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy
M. Pristovseka, S. Tsukamotoa, N. Koguchia, B. Hanb, K. Haberlandb, J.-T. Zettlerb, W. Richterb, M. Zornc, and M. Weyersc
Published in:
phys. stat. sol. (a), vol. 188, no. 4, pp. 1423-1429 (2001).
Abstract:
We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (nearly 20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at E1/E2+Delta1, an oscillation at E'0/E'0+Delta0 and an offset of the baseline of the whole spectrum. Using the empirical calibration in this paper, carrier concentrations above nearly 1017 cm-3 can be easily measured by RAS for a given temperature, dopant and reconstruction.
a National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
b Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, 10623 Berlin, Germany
c Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
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