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Nanoengineering of lateral strain modulation in quantum well heterostructures
/forschung/publikationen/nanoengineering-of-lateral-strain-modulation-in-quantum-well-heterostructures
We have developed a method to design a lateral band-gap modulation in a quantum well heterostructure. The lateral strain variation is induced by patterning of a stress or layer grown on top of a…
High-power 783 nm distributed-feedback laser
/forschung/publikationen/high-power-783nbspnm-distributed-feedback-laser
A ridge-waveguide GaAsP/AlGaAs laser, emitting an optical power of upto 200 mW in a single lateral and longitudinal mode at a wave- length of 783 nm, is presented. The distributed feedback…
Properties of As+-implanted and annealed GaAs and InGaAs quantum wells: Structural and band-structure modifications
/forschung/publikationen/properties-of-as-implanted-and-annealed-gaas-and-ingaas-quantum-wells-structural-and-band-structure-modifications
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy
/forschung/publikationen/in-situ-study-of-gaas-growth-mechanisms-using-tri-methyl-gallium-and-tri-ethyl-gallium-precursors-in-metal-organic-vapour-phase-epitaxy
A comparative study of GaAs (001) growth from tri-methyl gallium (TMGa) and tri-ethyl gallium (TEGa) was performed in metal-organic vapour phase epitaxy. The growth surfaces were characterised by…
Publikationen
/forschung/publikationen/in-situ-analysis-of-a-vertical-cavity-surface-emitting-laser-active-layer-by-two-photon-spectroscopy
Analysis of strain and composition distribution in laterally strain-modulated InGaAs nanostructures after overgrowth with GaAs or InGaP
/forschung/publikationen/analysis-of-strain-and-composition-distribution-in-laterally-strain-modulated-ingaas-nanostructures-after-overgrowth-with-gaas-or-ingap
Introduction: A laterally strain modulated nanostructure containing an InGaAs-single quantum well is overgrown with GaAs or compressively strained InGaP. The second epitaxy leads to an inhomogeneous…
Designing high-power single-frequency lasers
/forschung/publikationen/designing-high-power-single-frequency-lasers
Introduction: Single-frequency, single-spatial mode distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers have important applications in communication, spectroscopy and frequency…
High brightness 735 nm tapered lasers - optimisation of the laser geometry
/forschung/publikationen/high-brightness-735nbspnm-tapered-lasers-optimisation-of-the-laser-geometry
High brightness tapered laser diodes with different resonator geometries were fabricated and analysed. The devices consist of an index-guided straight section and a gain-guided tapered section.…
Publikationen
/forschung/publikationen/characterization-of-ingaasp-epitaxial-layers-grown-by-movpe-near-the-miscibility-gap