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Accuracy Limitations of Perfectly Matched Layers in 3D Finite-Difference Frequency-Domain Method
/forschung/publikationen/accuracy-limitations-of-perfectly-matched-layers-in-3d-finite-difference-frequency-domain-method
The perfectly matched layer (PML) boundary condition is employed in conjunction with the 3D finite-difference frequency-domain method (FDFD) for S-parameter calculation of microwave devices. We find…
GaAs HBT Operating as Integrated V-to W-Band Gunn Oscillator
/forschung/publikationen/gaas-hbt-operating-as-integrated-v-to-w-band-gunn-oscillator
Experimental results on GaAs HBT oscillators are presented exploiting the Gunn effect in the collector region. The HBTs are operated beyond fmax as MMIC-compatible two-port transferred-electron…
W-Band Flip-Chip Interconnects on Thin-Film Substrate
/forschung/publikationen/w-band-flip-chip-interconnects-on-thin-film-substrate
A flip-chip approach is presented using a thin-film microstrip line (TFMSL) on silicon as carrier substrate. Thin-film technology allows to employ cheap low-resistivity Si wafers without degrading…
Silicon Micromachined RF MEMS Resonators
/forschung/publikationen/silicon-micromachined-rf-mems-resonators
A new resonator concept based on three dimensional (3D) high resistivity silicon substrate filled cavity resonators is investigated. Fabrication is done using micro-machining technologies. Two types…
Towards a Unified Method to Implement Transit-Time Effects in Π-Topology HBT Compact Models
/forschung/publikationen/towards-a-unified-method-to-implement-transit-time-effects-in-p-topology-hbt-compact-models
Four different approaches to include transit-time effects into Π-topology HBT equivalent circuits are investigated in order to assess their compatibility with the physics-based T topology. The aim…
38 GHz Push-Push GaAs-HBT MMIC Oscillator
/forschung/publikationen/38-ghz-push-push-gaas-hbt-mmic-oscillator
Two differential coplanar MMIC HBT oscillators are presented, a fixed frequency and a VCO version. They provide single-ended output at the second harmonic at 38 GHz as well as differential output at…
New Extraction Algorithm for GaAs-HBTs With Low Intrinsic Base Resistance
/forschung/publikationen/new-extraction-algorithm-for-gaas-hbts-with-low-intrinsic-base-resistance
A new algorithm for extraction of the small-signal equivalent circuit elements of HBTs is presented. An analytical non-iterative approach is used in order to ensure physical significance of the…
Interdot energy transfer in a system of coupled InAs/GaAs quantum dots
/forschung/publikationen/interdot-energy-transfer-in-a-system-of-coupled-inasgaas-quantum-dots
We present new results concerning the carrier transfer between quantum dots (QDs) in dense InAs/GaAs QD arrays with a bimodal size distribution explored by means of steady state and time resolved…
Behavior of the Fermi-edge singularity in the photoluminescence spectra of a high-density two-dimensional electron gas
/forschung/publikationen/behavior-of-the-fermi-edge-singularity-in-the-photoluminescence-spectra-of-a-high-density-two-dimensional-electron-gas
Physical Review B, Vol. 65 (2002). © 2002 The American Physical Society. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or…
3D Hybrid Finite-Difference Method for Lossy Structures Based on Quasi-Static Field Solutions
/forschung/publikationen/3d-hybrid-finite-difference-method-for-lossy-structures-based-on-quasi-static-field-solutions
A new 3D hybrid finite-difference (FD) method is presented that accounts for finite conductivity. The field gradients inside conductors and structural details are treated combining quasi-static field…