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In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy
/forschung/publikationen/in-situ-study-of-gaas-growth-mechanisms-using-tri-methyl-gallium-and-tri-ethyl-gallium-precursors-in-metal-organic-vapour-phase-epitaxy-1
A comparative study of GaAs (001) growth from tri-methyl gallium (TMGa) and tri-ethyl gallium (TEGa) was performed in metal-organic vapour phase epitaxy. The growth surfaces were characterised by…
SiGe-Based Circuits for Sensor Applications beyond 100 GHz
/forschung/publikationen/sige-based-circuits-for-sensor-applications-beyond-100nbspghz
Key components of sensor front-ends have been realized for the frequency range beyond 100 GHz in a SiGe bipolar technology. The circuits presented include 110 GHz push-push and fundamental…
Large-Signal HBT Model Requirements to Predict Nonlinear Behaviour
/forschung/publikationen/large-signal-hbt-model-requirements-to-predict-nonlinear-behaviour
Measurements and simulations are carried out in order to determine the requirements for a HBT model to predict the generation of harmonics. Unlike investigations based on Volterra series, also the…
Highly efficient mode-locked Yb:Sc2O3 laser
/forschung/publikationen/highly-efficient-mode-locked-ybsc2o3-laser
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
Compact Hybrid Master Oscillator Power Amplifier With 3.1-W CW Output Power at Wavelengths Around 1061 nm
/forschung/publikationen/compact-hybrid-master-oscillator-power-amplifier-with-31w-cw-output-power-at-wavelengths-around-1061nbspnm
A hybrid master oscillator power amplifier (MOPA) laser source has been realized by coupling a single-mode three-section distributed Bragg reflector (DBR) laser as master oscillator and a tapered…
Quasi-3-D Simulation of High-Brightness Tapered Lasers
/forschung/publikationen/quasi-3-d-simulation-of-high-brightness-tapered-lasers
We present a simulation tool useful to optimize the design of semiconductor tapered lasers and to study the physical processes inside of them. This is achieved by using a state-of-the-art…
Uniqueness Problems in Compact HBT Models Caused by Thermal Effects
/forschung/publikationen/uniqueness-problems-in-compact-hbt-models-caused-by-thermal-effects
This paper identifies possible numerical instabilities in compact HBT models, which are introduced by a physical meaningful self-heating description. Removing these possible sources of nonconvergence…
Reliable 1-W CW Operation of High-Brightness Tapered Diode Lasers at 735 nm
/forschung/publikationen/reliable-1-w-cw-operation-of-high-brightness-tapered-diode-lasers-at-735nbspnm
The long-term stability of high-brightness diode lasers at 735 nm was investigated. The diodes consist of an index-guided straight section and a gain-guided tapered section. A 1-W…
Interlayer formation due to group V-hydride stabilization during interruptions of MOVPE growth of InGaP
/forschung/publikationen/interlayer-formation-due-to-group-v-hydride-stabilization-during-interruptions-of-movpe-growth-of-ingap
The effect of indium and arsenic carry-over and of arsenic-phosphorus exchange on unintentional interlayer formation due to prolonged stabilization under arsine or phosphine during InGaP growth…