Comparison of Optical VCSEL Models on the Simulation of Oxide-Confined Devices
P. Bienstman1, R. Baets1, J. Vukusic2, A. Larsson2, M.J. Noble3, M. Brunner4, K. Gulden4, P. Debernardia, L. Frattaa, G.P. Bavaa, H. Wenzel6, B. Klein7, O. Conradi8, R. Pregla8, S.A. Riyopoulos9, J.P. Seurin10 and S.L. Chuang11
Published in:
IEEE J. Quantum Electron., vol. 37, no. 12, pp. 1618-1631 (2001).
Abstract:
We compare the results of different optical vertical-cavity surface-emitting laser models on the position-dependet effects of thin oxide apertures. Both scalar and vectorial models as well as hybrid models are considered. Physical quantities that are compared are resonance wavelength, threshold material gain, and modal stability. For large device diameters and low-order modes, the agreement between the different models is quite good. Larger differences occur when considering smaller devices and higher order modes. It is also observed that the spread in the resonance wavelengths is smaller than that for the threshold material gain.
1 Department of Information Technology, Ghent University/IMEC, B-9000 Ghent, Belgium
2 Microtechnology Center at Chalmers (MC2) and the Photonics Laboratory, Department of Microelectronics, Chalmers University of Technology, SE-41296 Göteborg, Sweden
3 U.S. Air Force, Research Lab Sensors Directorate, AFRL, SNHC, Hanscom AFB, MA 01731 USA
4 Avalon Photonics Ltd., CH-8048 Zurich, Switzerland
5 IRITI-CNR, Dipartimento di Elettronica and INFM Torino, Politecnico di Torino, 10129 Torino, Italy
6 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
7 Beckman Institute, University of Illinois, Urbana, IL 61801 USA
8 Fernuniversität Hagen, D-58084 Hagen, Germany
9 SAIC, McLean, VA 22102 USA
10 Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 USA and also Princeton Optronics, Princeton, NJ 08543-8627 USA
11 Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 USA
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