G. Erbert, G. Beister, F. Bugge, A. Knauer, R. Hülsewede, W. Pittroff, J. Sebastian, H. Wenzel, M. Weyers. G. Tränkle

Published in:

Proc. SPIE, vol. 4287, pp. 93-102 (2001).

Abstract:

In this paper we report on Al-free InGaAs/InGaAsP/InGaP broad area laser diodes emitting at 950nm and on 810nm-laser diodes with Al-free GaAsP quantum wells in AlGaAs waveguides. 2mm long diode lasers show a high wall plug efficiency above 50% at output powers of about 3W. The beam characteristics of these diode lasers benefit from small confinement factors. Results depending on stripe width and resonator length are given.
Aging tests were performed under a facet load of 30mW/µm (i.e. 3W for 100µm stripe width). From the degradation rates, a live time of several thousand hours can be extrapolated. The improvement of the stability at such a high output power per stripe width is due the effect of lowering the facet load by a broadened waveguide structure, especially for 810nm diode lasers, and is furthermore a result of the stability of the Al-free material.
These results demonstrate the potential of the semiconductor material for reliable 1cm diode laser bars at an output power above the 50W level typically available at present.

Keywords:
high-power diode lasers, strained quantum wells, aluminium-free diode lasers, beam characteristics, reliability

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