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High power and high spectral brightness in 1060 nm α-DFB lasers with long resonators
/forschung/publikationen/high-power-and-high-spectral-brightness-in-1060nbspnm-alpha-dfb-lasers-with-long-resonators
Angled grating DFB lasers with long resonators were fabricated and characterised at 1060 nm. 4 mm-long laser diodes showed a CW-output power of 3 W with a times-diffraction-limit…
3 W - high brightness tapered diode lasers at 735 nm based on tensile strained GaAsP-QWs
/forschung/publikationen/3nbspwnbsp-nbsphigh-brightness-tapered-diode-lasers-at-735nbspnm-based-on-tensile-strained-gaasp-qws
Tensile strained GaAsP quantum wells embedded in AlGaAs waveguide structures are used to realize high power, high brightness short wavelength tapered laser diodes. At 735 nm these laser diodes…
Transient luminescence of dense InAs/GaAs quantum dot arrays
/forschung/publikationen/transient-luminescence-of-dense-inasgaas-quantum-dot-arrays
Carrier transfer between quantum dots (QDs) in very dense InAs/GaAs QD arrays is studied by means of steady state and time-resolved photoluminescence spanning a wide range of laser power from 109 to…
Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs-nanostructures
/forschung/publikationen/influence-of-lateral-patterning-geometry-on-lateral-carrier-confinement-in-strain-modulated-ingaas-nanostructures
Lateral patterning of a tensily strained InGaP stressor layer is used to induce a lateral carrier confinement in an InGaAs-single quantum well (SQW) by lateral strain modulation. It is shown that the…
Modeling Dispersion and Radiation Characteristics of Conductor-Backed CPW with Finite Ground Width
/forschung/publikationen/modeling-dispersion-and-radiation-characteristics-of-conductor-backed-cpw-with-finite-ground-width
Dispersion and radiation properties of the conductor-backed coplanar waveguide (CPW) with finite ground planes are analyzed and modeled. A frequency-domain finite-difference method using the…
Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions
/forschung/publikationen/properties-of-ingaaspgaas-interfaces-grown-under-different-metalorganic-vapor-phase-epitaxy-conditions
The mechanisms for formation of interlayers at the interface of GaAs on (In,Ga)P and In0.15Ga0.85As0.7P0.3 grown by metalorganic vapor phase epitaxy have been studied by capacitance-voltage profiling…
Highly strained very high-power laser diodes with InGaAs QWs
/forschung/publikationen/highly-strained-very-high-power-laser-diodes-with-ingaas-qws
With the aim of realizing laser diodes in the wavelength range beyond 1100 nm on GaAs, we have studied the indium incorporation behaviour into pseudomorphic InGaAs-quantum wells with extremely…
Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors
/forschung/publikationen/automated-emissivity-corrected-wafer-temperature-measurement-in-aixtrons-planetary-reactors
A procedure and set-up for high-precision determination of the true surface temperature of wafers during growth by metalorganic vapour phase epitaxy is described. The reflectance of the surface…
In-situ determination of interface roughness in MOVPE-grown visible VCSELs by reflectance spectroscopy
/forschung/publikationen/in-situ-determination-of-interface-roughness-in-movpe-grown-visible-vcsels-by-reflectance-spectroscopy
This paper reports on an in-situ optical reflectance study of the development of the interface roughness of AlGaAs/AlAs distributed Bragg reflectors during the metalorganic vapour phase epitaxy…
MOVPE growth of visible vertical-cavity surface-emitting lasers (VCSELs)
/forschung/publikationen/movpe-growth-of-visible-vertical-cavity-surface-emitting-lasers-vcsels
This paper summaries the development of the epitaxial growth process for visible vertical-cavity surface-emitting lasers (VCSELs) in metal-organic vapour phase epitaxy (MOVPE). The production of…