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Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/precision-uv-laser-scribing-for-cleaving-mirror-facets-of-gan-based-laser-diodes
Laser scribing with a nanosecond-pulsed UV laser operating at 355 nm was used to create precise perforation for die separation of GaN-based laser diodes. Machining depth of single- and…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/normally-off-gan-hemts-with-p-type-gate-off-state-degradation-forward-gate-stress-and-esd-failure
This paper reports an analysis of the degradation mechanisms of GaN-based normally-off transistors submitted to off-state stress, forward-gate operation and electrostatic discharges. The analysiswas…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/quantification-of-matrix-and-impurity-elements-in-alxga1-xn-compounds-by-secondary-ion-mass-spectrometry
The authors describe a comprehensive secondary ion mass spectrometry (SIMS) calibration procedure for the quantification of matrix and impurity elements of epitaxially grown AlxGa1-xN layers over the…
Power performance of 65 nm CMOS integrated LDMOS transistors at WLAN and X-band frequencies
/forschung/publikationen/generation-of-second-harmonic-light-with-a-wavelength-of-560-nm-in-a-compact-module
We demonstrate a continuous wave 133 mW laser module at 560.5 nm on a 50 mm · 10 mm optical bench. The setup consists of a 1121 nm distributed Bragg reflector ridge…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/gate-reliability-investigation-in-normally-off-p-type-gan-capalgangan-hemts-under-forward-bias-stress
Gate reliability of normally-off p-type-GaN/AlGaN/GaN high-electron mobility transistors grown on Si substrate subjected to forward bias stress at different gate voltages and temperatures was…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/low-absorption-loss-p-algan-superlattice-cladding-layer-for-current-injection-deep-ultraviolet-laser-diodes
Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/watt-level-second-harmonic-generation-at-589nbspnm-with-a-ppmgoln-ridge-waveguide-crystal-pumped-by-a-dbr-tapered-diode-laser
A DBR tapered diode laser in continuous wave operation was used to generate second-harmonic radiation at 589 nm in a PPMgO:LN ridge waveguide crystal. An optical output power of 0.86 W at…
Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V
/forschung/publikationen/kinetics-of-algan-metal-organic-vapor-phase-epitaxy-for-deep-uv-applications
AlxGa1-xN layers with high aluminum content of x ∼ 0.68-0.73 were grown in an 11 × 2-in. AIX 2400 G3 HT planetary reactor by metal-organic vapor phase epitaxy. Growth trends are analyzed by…
DBR tapered diode laser with 12.7 W output power and nearly diffraction-limited, narrowband emission at 1030 nm
/forschung/publikationen/dbr-tapered-diode-laser-with-127-w-output-power-and-nearly-diffraction-limited-narrowband-emission-at-1030-nm
A 1030 nm distributed Bragg reflector (DBR) tapered diode laser with nearly diffraction-limited emission is presented. The laser provides an optical output power of 12.7 W with an…
Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer
/forschung/publikationen/multifinger-indium-phosphide-double-heterostructure-transistor-circuit-technology-with-integrated-diamond-heat-sink-layer
The RF power output of scaled subterahertz and terahertz indium phosphide double-heterostructure bipolar transistors (InP DHBTs) is limited by the thermal device resistance, which increases with the…