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Efficient 600-W-Laser Bars for Long-Pulse Pump Applications at 940 and 975 nm
/forschung/publikationen/efficient-600-w-laser-bars-for-long-pulse-pump-applications-at-940-and-975nbspnm
We report the first demonstration of 1.2 J-emission into long pulses (≥2 ms) from passively cooled laser bars. These efficient high-fill-factor bars were developed for long-pulse pumping…
Triangular-shaped sapphire patterning for HVPE grown AlGaN layers
/forschung/publikationen/triangular-shaped-sapphire-patterning-for-hvpe-grown-algan-layers
AlGaN growth by hydride vapor phase epitaxy on patterned sapphire substrates has been investigated. Growth on honeycomb-shaped holes is disturbed by parasitic growth of c-plane oriented AlGaN…
Influence of AlN buffer layer on growth of AlGaN by HVPE
/forschung/publikationen/influence-of-aln-buffer-layer-on-growth-of-algan-by-hvpe
To the end of improvement of layer morphology and crystalline perfection of thick AlGaN layers grown by hydride vapor phase epitaxy (HVPE) as well as for the suppression of crystallite formation…
Avoidance of instable photoluminescence intensity from AlGaN bulk layers
/forschung/publikationen/avoidance-of-instable-photoluminescence-intensity-from-algan-bulk-layers
The emission intensity from c-plane AlGaN bulk layers changes strongly on time scales from seconds to hours during above band gap illumination in photoluminescence experiments. Responsible for this…
Shifted Excitation Raman Difference Spectroscopy applied to extraterrestrial particles returned from the asteroid Itokawa
/forschung/publikationen/shifted-excitation-raman-difference-spectroscopy-applied-to-extraterrestrial-particles-returned-from-the-asteroid-itokawa
Two extraterrestrial particles from the asteroid Itokawa are investigated applying Shifted Excitation Raman Difference Spectroscopy (SERDS). These particles were returned by the Hayabusa mission of…
Resonator-Length Dependence of Electron-Beam-Pumped UV-A GaN-Based Lasers
/forschung/publikationen/resonator-length-dependence-of-electron-beam-pumped-uv-a-gan-based-lasers
The dependence of resonator length on the threshold power and emission wavelength of electron-beam-pumped UV-A edge-type emitting lasers is demonstrated. The lowest pump power thresholds are achieved…
Stability Analysis of Digital Microwave Power Amplifiers
/forschung/publikationen/stability-analysis-of-digital-microwave-power-amplifiers
This paper presents a stability analysis of microwave power amplifiers (PAs) driven by binary pulse trains, as in the case of class-S PAs. First, using a simplified digital PA test bench in class-D…
Mid-infrared beam splitter for ultrashort pulses
/forschung/publikationen/mid-infrared-beam-splitter-for-ultrashort-pulses
A design is presented for a beam splitter suitable for ultrashort pulses in the mid-infrared and terahertz spectral range consisting of a structured metal layer on a diamond substrate. Both the…
Impact of longitudinal refractive index change on the near-field width of high-power broad-area diode lasers
/forschung/publikationen/impact-of-longitudinal-refractive-index-change-on-the-near-field-width-of-high-power-broad-area-diode-lasers
Typical for broad-area laser (BAL) diodes operating in a continuous-wave mode is a narrowing of the near-field (NF) width at the output facet for high injection currents (output powers). This…
Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780 nm
/forschung/publikationen/comparison-of-symmetric-and-asymmetric-double-quantum-well-extended-cavity-diode-lasers-for-broadband-passive-mode-locking-at-780nbspnm
We present a compact, mode-locked diode laser system designed to emit a frequency comb in the wavelength range around 780 nm. We compare the mode-locking performance of symmetric and asymmetric…