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Measurement and simulation of top- and bottom-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors with high external quantum efficiencies
/forschung/publikationen/measurement-and-simulation-of-top-and-bottom-illuminated-solar-blind-algan-metal-semiconductor-metal-photodetectors-with-high-external-quantum-efficiencies
A comprehensive study on top- and bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductormetal (MSM) photodetectors having different AlGaN absorber layer thickness is presented. The measured external…
Advanced lumped-element filters for digital microwave power amplifiers
/forschung/publikationen/advanced-lumped-element-filters-for-digital-microwave-power-amplifiers
In this paper, two compact lumped-element band pass reconstruction filters for digital microwave power amplifiers applications in the 800 MHz band are presented. The filters, based on the…
Analysis of the Switching Threshold in Dual-Level Class-G Modulated Power Amplifiers
/forschung/publikationen/analysis-of-the-switching-threshold-in-dual-level-class-g-modulated-power-amplifiers
A two-level class-G RF power amplifier system is analyzed. Measurements show that for low output powers there is an optimum switching threshold valid for both PAE and linearity while for higher…
Process Robustness and Reproducibility of sub-mm Wave Flip-Chip Interconnect Assembly
/forschung/publikationen/process-robustness-and-reproducibility-of-sub-mm-wave-flip-chip-interconnect-assembly
The design margins for sub-mm-wave flip-chip transitions in three different topologies, coplanar-to-coplanar, stripline-to-coplanar, and stripline-to-stripline, were verified with the realization and…
Diversität
/karriere/fbh-als-arbeitgeber/diversitaet
Wir leben Vielfalt – sie ist integraler Bestandteil unseres Instituts, einer der international führenden Forschungseinrichtungen für III/V-Verbindungshalbleiter! Momentan beschäftigen wir über 350…
GaN-based Power Devices Design and Development with Silvaco TCAD Solution
/termine/gan-based-power-devices-design-and-development-with-silvaco-tcad-solution
Dr. Eldad Bahat-Treidel Ferdinand-Braun-Institut
2 nm continuously tunable 488 nm micro-integrated diode laser based SHG light source for Raman spectroscopy
/forschung/publikationen/2-nm-continuously-tunable-488-nm-micro-integrated-diode-laser-based-shg-light-source-for-raman-spectroscopy
Raman spectroscopy in the visible spectral range is of great interest due to resonant Raman effects. Nevertheless, fluorescence and ambient light can mask the weak Raman lines. Shifted excitation…
High-power operation of coherently coupled tapered laser diodes in an external cavity
/forschung/publikationen/high-power-operation-of-coherently-coupled-tapered-laser-diodes-in-an-external-cavity
We demonstrate a rear-side phase-locking architecture with two high-brightness diode lasers. This technique is based on the passive phase-locking of emitters in an external cavity on their rear…
940nm QCW diode laser bars with 70% efficiency at 1 kW output power at 203K: analysis of remaining limits and path to higher efficiency and power at 200K and 300K
/forschung/publikationen/940nm-qcw-diode-laser-bars-with-70-efficiency-at-1-kw-output-power-at-203k-analysis-of-remaining-limits-and-path-to-higher-efficiency-and-power-at-200k-and-300k
Both high-energy-class laser facilities and commercial high-energy pulsed laser sources require reliable optical pumps with the highest pulse power and electro-optical efficiency. Although commercial…
Assessing the Influence of the Vertical Epitaxial Layer Design on the Lateral Beam Quality of High-Power Broad Area Diode Lasers
/forschung/publikationen/assessing-the-influence-of-the-vertical-epitaxial-layer-design-on-the-lateral-beam-quality-of-high-power-broad-area-diode-lasers
GaAs-based high-power broad-area diode lasers deliver optical output powers Popt > 10W with efficiency > 60%. However, their application is limited due to poor in-plane beam…